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Proceedings Paper

Growth of heterostructured III-V nanowires by molecular beam epitaxy for photonic applications
Author(s): D. L. Dheeraj; H. L. Zhou; A. F. Moses; T. B. Hoang; A. T. J. van Helvoort; B. O. Fimland; H. Weman
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Paper Abstract

We report the results on the growth, structural and optical characterization of single wurtzite (WZ) GaAs nanowires as well as WZ GaAs/AlGaAs core-shell nanowires with ZB GaAsSb inserts. For the GaAs/GaAsSb heterojunction both the crystal material and crystal phase change plays a critical role in the exact band alignment. We show that ZB GaAsSb inserts with both WZ and ZB GaAs barriers can be grown and hence both type I and type II band alignment can be achieved which has large effects on the optical properties of the nanowires. We thus demonstrate that it is possible to engineer the band-structure at a semiconductor heterojunction by modulating the crystal material as well as the crystal phase.

Paper Details

Date Published: 23 January 2010
PDF: 6 pages
Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081C (23 January 2010); doi: 10.1117/12.847030
Show Author Affiliations
D. L. Dheeraj, Norwegian Univ. of Science and Technology (Norway)
H. L. Zhou, Norwegian Univ. of Science and Technology (Norway)
A. F. Moses, Norwegian Univ. of Science and Technology (Norway)
T. B. Hoang, Norwegian Univ. of Science and Technology (Norway)
A. T. J. van Helvoort, Norwegian Univ. of Science and Technology (Norway)
B. O. Fimland, Norwegian Univ. of Science and Technology (Norway)
H. Weman, Norwegian Univ. of Science and Technology (Norway)


Published in SPIE Proceedings Vol. 7608:
Quantum Sensing and Nanophotonic Devices VII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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