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Proceedings Paper

Polar and semipolar III-nitrides for long wavelength intersubband devices
Author(s): E. Monroy; P. K. Kandaswamy; H. Machhadani; A. Wirthmüller; S. Sakr; L. Lahourcade; A. Das; M. Tchernycheva; P. Ruterana; F. H. Julien
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Paper Abstract

Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar and semipolar AlGaN/GaN technologies for this relevant spectral range.

Paper Details

Date Published: 22 January 2010
PDF: 6 pages
Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081G (22 January 2010); doi: 10.1117/12.847027
Show Author Affiliations
E. Monroy, Nanophysique et Semiconductors, CEA-CNRS (France)
P. K. Kandaswamy, Nanophysique et Semiconductors, CEA-CNRS (France)
H. Machhadani, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
A. Wirthmüller, Nanophysique et Semiconductors, CEA-CNRS (France)
S. Sakr, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
L. Lahourcade, Nanophysique et Semiconductors, CEA-CNRS (France)
A. Das, Nanophysique et Semiconductors, CEA-CNRS (France)
M. Tchernycheva, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
P. Ruterana, CIMAP, CNRS-ENSICAEN-CEA-UCBN (France)
F. H. Julien, Institut d'Electronique Fondamentale (France)


Published in SPIE Proceedings Vol. 7608:
Quantum Sensing and Nanophotonic Devices VII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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