Share Email Print

Proceedings Paper

Carbon contamination topography analysis of EUV masks
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.

Paper Details

Date Published: 20 March 2010
PDF: 8 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360G (20 March 2010); doi: 10.1117/12.846996
Show Author Affiliations
Yu-Jen Fan, Univ. at Albany (United States)
Leonid Yankulin, Univ. at Albany (United States)
Petros Thomas, Univ. at Albany (United States)
Chimaobi Mbanaso, Univ. at Albany (United States)
Alin Antohe, Univ. at Albany (United States)
Rashi Garg, Univ. at Albany (United States)
Yunfei Wang, Univ. at Albany (United States)
Thomas Murray, Univ. at Albany (United States)
Andrea Wüest, SEMATECH North (United States)
Frank Goodwin, SEMATECH North (United States)
Sungmin Huh, SEMATECH North (United States)
Aaron Cordes, SEMATECH North (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Kenneth Goldberg, Lawrence Berkeley National Lab. (United States)
Iacopo Mochi, Lawrence Berkeley National Lab. (United States)
Eric Gullikson, Lawrence Berkeley National Lab. (United States)
Gregory Denbeaux, Univ. at Albany (United States)

Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

© SPIE. Terms of Use
Back to Top