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Proceedings Paper

Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance
Author(s): Lan Chen; Yong-Keng Goh; Kirsten Lawrie; Bruce Smith; Warren Montgomery; Paul A. Zimmerman; Idriss Blakey; Andrew K. Whittaker
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Paper Abstract

The feasibility of three polymer systems for use as non chemically amplified resists for 193 nm lithography are discussed. The three systems are polycarbonates, polyphthalaldehydes and polysulfones. In general it was found that increased absorbance resulted in higher sensitivity to 193 nm light. However, the exception to this was the polycarbonates, which were found to undergo crosslinking due to an alkene group present in the polymer backbone. Although polyphthalaldehydes were very sensitive, their absorbance values were too high to be useful in a commercial environment. Absorbing polysulfones were found to be sensitive to 193 nm light and initial patterning results have been presented.

Paper Details

Date Published: 29 March 2010
PDF: 9 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390V (29 March 2010); doi: 10.1117/12.846971
Show Author Affiliations
Lan Chen, The Univ. of Queensland (Australia)
Yong-Keng Goh, The Univ. of Queensland (Australia)
Kirsten Lawrie, The Univ. of Queensland (Australia)
Bruce Smith, Rochester Institute of Technology (United States)
Warren Montgomery, SEMATECH Inc. (United States)
Paul A. Zimmerman, SEMATECH Inc. (United States)
Idriss Blakey, The Univ. of Queensland (Australia)
Andrew K. Whittaker, The Univ. of Queensland (Australia)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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