Share Email Print

Proceedings Paper

Photoresist-induced development behavior in DBARCs
Author(s): Jim D. Meador; Alice Guerrero; Joyce A. Lowes; Charlyn Stroud; Brandy Carr; Anwei Qin; Carlton Washburn; Ramil-Marcelo L. Mercado
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Developer-soluble bottom anti-reflective coating (DBARC) BSI.W09008 has provided promising lithography results with five different 193-nm photoresists, with the accomplishments including 120-nm L/S (1:1) and 130-nm L/S through-pitch (i.e., 1:1, 1:3, and isolated line). This DBARC is not inherently light sensitive and depends on diffusing photoacid from the exposed photoresist for development. With undercutting being an issue for the PAG-less DBARC with some resists, the shapes of 130-nm lines (both dense and isolated) were improved by either a) incorporating a small amount of a base additive in the BSI.W09008 formulation or b) altering the structure of the DBARC's binder polymer. With selected photoresist(s) and/or resist processing conditions, either photoacid diffusion or photoacid activity is inadequate to give DBARC clearance and BSI.W09008 performs more as a dry BARC. The post-development residue obtained from BSI.W09008 on a silicon substrate is much less dependent on the initial DBARC film thickness and the exposure dose than for earlier-generation photosensitive (PS)-DBARC BSI.W07327A, using the same photoresist. BSI.W09008 also gives less post-development residue than BSI.W07327A using the same resist on a silicon nitride substrate at exposure doses of 14-25 mJ/cm2.

Paper Details

Date Published: 30 March 2010
PDF: 10 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763926 (30 March 2010); doi: 10.1117/12.846927
Show Author Affiliations
Jim D. Meador, Brewer Science, Inc. (United States)
Alice Guerrero, Brewer Science, Inc. (United States)
Joyce A. Lowes, Brewer Science, Inc. (United States)
Charlyn Stroud, Brewer Science, Inc. (United States)
Brandy Carr, Brewer Science, Inc. (United States)
Anwei Qin, Brewer Science, Inc. (United States)
Carlton Washburn, Brewer Science, Inc. (United States)
Ramil-Marcelo L. Mercado, Brewer Science, Inc. (United States)

Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

© SPIE. Terms of Use
Back to Top