Share Email Print
cover

Proceedings Paper

Alternatives to chemical amplification for 193nm lithography
Author(s): Burak Baylav; Meng Zhao; Ran Yin; Peng Xie; Chris Scholz; Bruce Smith; Thomas Smith; Paul Zimmerman
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Research has been conducted to develop alternatives to chemically amplified 193 nm photoresist materials that will be able to achieve the requirements associated with sub-32 nm device technology. New as well as older photoresist design concepts for non-chemically amplified 193 nm photoresists that have the potential to enable improvements in line edge roughness while maintaining adequate sensitivity, base solubility, and dry etch resistance for high volume manufacturing are being explored. The particular platforms that have been explored in this work include dissolution inhibitor photoresist systems, chain scissioning polymers, and photoresist systems based on polymers incorporating formyloxyphenyl functional groups. In studies of two-component acidic polymer/dissolution inhibitor systems, it was found that compositions using ortho-nitrobenzyl cholate (NBC) as the dissolution inhibitor and poly norbornene hexafluoro alcohol (PNBHFA) as the base resin are capable of printing 90 nm dense line/space patterns upon exposure to a 193 nm laser. Studies of chain scission enhancement in methylmethacrylate copolymers showed that incorporating small amounts of absorptive a-cleavage monomers significantly enhanced sensitivity with an acceptable increase in absorbance at 193 nm. Specifically, it was found that adding 3 mol% of α-methyl styrene (α-MS) reduced the dose to clear of PMMA-based resist from 1400 mJ/cm2 to 420 mJ/cm2. Preliminary data are also presented on a direct photoreactive design concept based on the photo-Fries reaction of formyloxyphenyl functional groups in acrylic copolymers.

Paper Details

Date Published: 30 March 2010
PDF: 12 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763915 (30 March 2010); doi: 10.1117/12.846924
Show Author Affiliations
Burak Baylav, Rochester Institute of Technology (United States)
Meng Zhao, Rochester Institute of Technology (United States)
Ran Yin, Rochester Institute of Technology (United States)
Peng Xie, Rochester Institute of Technology (United States)
Chris Scholz, Rochester Institute of Technology (United States)
Bruce Smith, Rochester Institute of Technology (United States)
Thomas Smith, Rochester Institute of Technology (United States)
Paul Zimmerman, SEMATECH Inc. (United States)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

© SPIE. Terms of Use
Back to Top