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Proceedings Paper

A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection
Author(s): Sungmin Huh; Liping Ren; David Chan; Stefan Wurm; Kenneth Goldberg; Iacopo Mochi; Toshio Nakajima; Masahiro Kishimoto; Byungsup Ahn; Inyong Kang; Joo-on Park; Kyoungyong Cho; Sang-in Han; Thomas Laursen
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Paper Abstract

The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing, yet little data is available for understanding native defects on real masks. In this paper, a full-field EUV mask is fabricated to investigate the printability of various defects on the mask. The printability of defects and identification of their source from mask fabrication to handling were studied using wafer inspection. The printable blank defect density excluding particles and patterns is 0.63/cm2. Mask inspection is shown to have better sensitivity than wafer inspection. The sensitivity of wafer inspection must be improved using through-focus analysis and a different wafer stack.

Paper Details

Date Published: 20 March 2010
PDF: 7 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360K (20 March 2010); doi: 10.1117/12.846922
Show Author Affiliations
Sungmin Huh, SEMATECH North (United States)
Liping Ren, SEMATECH North (United States)
David Chan, SEMATECH North (United States)
Stefan Wurm, SEMATECH North (United States)
Kenneth Goldberg, Lawrence Berkeley National Lab. (United States)
Iacopo Mochi, Lawrence Berkeley National Lab. (United States)
Toshio Nakajima, AGC Electronics America, Inc. (United States)
Masahiro Kishimoto, AGC Electronics America, Inc. (United States)
Byungsup Ahn, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Inyong Kang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Joo-on Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kyoungyong Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sang-in Han, ASML US, Inc. (United States)
Thomas Laursen, ASML US, Inc. (United States)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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