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Proceedings Paper

Process characterization of pitch-split resist materials for application at 16nm node
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Paper Abstract

Lithographic scaling beyond the 22 nm node requires double patterning techniques to achieve pitch values below 80nm. The semiconductor industry is focusing on the development of several process techniques including track-only lithographic processing methods in order to reduce cost, cycle time and defects. Initial efforts for track-only double expose processes have relied on the use of chemical freeze materials to prevent inter-mixing of resists, and also by means of thermal curable materials. These two techniques may be complementary, in the sense that a chemical freeze may be very robust for protection of exposed regions, while thermal cure systems may provide strong protection of large unexposed areas. We will describe our results with mainly the thermal-cure double patterning resist materials, and the application of these materials to the fabrication of sub-80 nm pitch semiconductor structures. We will summarize the process window and defect capability of these materials, for both line/space and via applications.

Paper Details

Date Published: 25 March 2010
PDF: 10 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392X (25 March 2010); doi: 10.1117/12.846891
Show Author Affiliations
Steven J. Holmes, Albany Nanotech Institute (United States)
Cherry Tang, JSR Micro, Inc. (United States)
John C. Arnold, IBM T. J. Watson Research Ctr. (United States)
Yunpeng Yin, Albany Nanotech Institute (United States)
Rex Chen, IBM Corp. (United States)
Nicolette Fender, JSR Micro, Inc. (United States)
Brian Osborn, JSR Micro, Inc. (United States)
Gary Dabbagh, JSR Micro, Inc. (United States)
Sen Liu, IBM Corp. (United States)
Matthew Colburn, Albany Nanotech Institute (United States)
Rao P. Varanasi, IBM Corp. (United States)
Mark Slezak, JSR Micro, Inc. (United States)

Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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