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Proceedings Paper

Manipulation of optical modes in quantum dot laser diodes by selective oxidation of high aluminum content AlGaAs layers
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Paper Abstract

We describe the effects created by selective oxidation of high aluminium content AlGaAs layers at the facets of 5-stack quantum dot edge-emitting 50μm stripe lasers. The steam oxidation affects only the facet areas of the devices, where unpumped sections are created. These unpumped regions alone enable reduction of the width of the lasing near-field spatial profile of up to 65% and the reduction of threshold in long devices by up to 30%. These effects are attributed to saturable absorber-type behaviour, where the absorber saturates first at the location of highest optical intensity, so allowing lasing over a smaller spatial area. Secondly, a combination of self-heating at the facets and the saturable absorption generates novel saw-toothed wavelength-time profiles. A model for the behaviour behind all of these results is proposed and backed up with experimental data.

Paper Details

Date Published: 12 February 2010
PDF: 10 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161T (12 February 2010); doi: 10.1117/12.846843
Show Author Affiliations
G. J. Michell, Cardiff Univ. (United Kingdom)
P. M Smowton, Cardiff Univ. (United Kingdom)
H. D. Summers, Swansea Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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