Share Email Print

Proceedings Paper

A simplified reaction-diffusion system of chemically amplified resist process modeling for OPC
Author(s): Yongfa Fan; Moon-Gyu Jeongb; Junghoon Ser; Sung-Woo Lee; Chunsuk Suh; Kyo-Il Koo; Sooryong Lee; Irene Su; Lena Zavyalova; Brad Falch; Jason Huang; Thomas Schmoeller
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

As semiconductor manufacturing moves to 32nm and 22nm technology nodes with 193nm water immersion lithography, the demand for more accurate OPC modeling is unprecedented to accommodate the diminishing process margin. Among all the challenges, modeling the process of Chemically Amplified Resist (CAR) is a difficult and critical one to overcome. The difficulty lies in the fact that it is an extremely complex physical and chemical process. Although there are well-studied CAR process models, those are usually developed for TCAD rigorous lithography simulators, making them unsuitable for OPC simulation tasks in view of their full-chip capability at an acceptable turn-around time. In our recent endeavors, a simplified reaction-diffusion model capable of full-chip simulation was investigated for simulating the Post-Exposure-Bake (PEB) step in a CAR process. This model uses aerial image intensity and background base concentration as inputs along with a small number of parameters to account for the diffusion and quenching of acid and base in the resist film. It is appropriate for OPC models with regards to speed, accuracy and experimental tuning. Based on wafer measurement data, the parameters can be regressed to optimize model prediction accuracy. This method has been tested to model numerous CAR processes with wafer measurement data sets. Model residual of 1nm RMS and superior resist edge contour predictions have been observed. Analysis has shown that the so-obtained resist models are separable from the effects of optical system, i.e., the calibrated resist model with one illumination condition can be carried to a process with different illumination conditions. It is shown that the simplified CAR system has great potential of being applicable to full-chip OPC simulation.

Paper Details

Date Published: 10 March 2010
PDF: 11 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 764039 (10 March 2010); doi: 10.1117/12.846737
Show Author Affiliations
Yongfa Fan, Synopsys, Inc. (United States)
Moon-Gyu Jeongb, Samsung Electronics (Korea, Republic of)
Junghoon Ser, Samsung Electronics (Korea, Republic of)
Sung-Woo Lee, Samsung Electronics (Korea, Republic of)
Chunsuk Suh, Samsung Electronics (Korea, Republic of)
Kyo-Il Koo, Synopsys, Inc. (Korea, Republic of)
Sooryong Lee, Synopsys, Inc. (Korea, Republic of)
Irene Su, Synopsys, Inc. (Taiwan)
Lena Zavyalova, Synopsys, Inc. (United States)
Brad Falch, Synopsys, Inc. (United States)
Jason Huang, Synopsys, Inc. (United States)
Thomas Schmoeller, Synopsys, Inc. (Germany)

Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

© SPIE. Terms of Use
Back to Top