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Proceedings Paper

Demonstrating the benefits of source-mask optimization and enabling technologies through experiment and simulations
Author(s): David Melville; Alan E. Rosenbluth; Kehan Tian; Kafai Lai; Saeed Bagheri; Jaione Tirapu-Azpiroz; Jason Meiring; Scott Halle; Greg McIntyre; Tom Faure; Daniel Corliss; Azalia Krasnoperova; Lei Zhuang; Phil Strenski; Andreas Waechter; Laszlo Ladanyi; Francisco Barahona; Daniele Scarpazza; Jon Lee; Tadanobu Inoue; Masaharu Sakamoto; Hidemasa Muta; Alfred Wagner; Geoffrey Burr; Young Kim; Emily Gallagher; Mike Hibbs; Alexander Tritchkov; Yuri Granik; Moutaz Fakhry; Kostas Adam; Gabriel Berger; Michael Lam; Aasutosh Dave; Nick Cobb
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Paper Abstract

In recent years the potential of Source-Mask Optimization (SMO) as an enabling technology for 22nm-and-beyond lithography has been explored and documented in the literature.1-5 It has been shown that intensive optimization of the fundamental degrees of freedom in the optical system allows for the creation of non-intuitive solutions in both the mask and the source, which leads to improved lithographic performance. These efforts have driven the need for improved controllability in illumination5-7 and have pushed the required optimization performance of mask design.8, 9 This paper will present recent experimental evidence of the performance advantage gained by intensive optimization, and enabling technologies like pixelated illumination. Controllable pixelated illumination opens up new regimes in control of proximity effects,1, 6, 7 and we will show corresponding examples of improved through-pitch performance in 22nm Resolution Enhancement Technique (RET). Simulation results will back-up the experimental results and detail the ability of SMO to drive exposure-count reduction, as well as a reduction in process variation due to critical factors such as Line Edge Roughness (LER), Mask Error Enhancement Factor (MEEF), and the Electromagnetic Field (EMF) effect. The benefits of running intensive optimization with both source and mask variables jointly has been previously discussed.1-3 This paper will build on these results by demonstrating large-scale jointly-optimized source/mask solutions and their impact on design-rule enumerated designs.

Paper Details

Date Published: 16 March 2010
PDF: 18 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 764006 (16 March 2010); doi: 10.1117/12.846716
Show Author Affiliations
David Melville, IBM Thomas J. Watson Research Ctr. (United States)
Alan E. Rosenbluth, IBM Thomas J. Watson Research Ctr. (United States)
Kehan Tian, IBM Semiconductor Research and Development Ctr. (United States)
Kafai Lai, IBM Semiconductor Research and Development Ctr. (United States)
Saeed Bagheri, IBM Thomas J. Watson Research Ctr. (United States)
Jaione Tirapu-Azpiroz, IBM Semiconductor Research and Development Ctr. (United States)
Jason Meiring, IBM Semiconductor Research and Development Ctr. (United States)
Scott Halle, IBM Research at Albany Nanotech (United States)
Greg McIntyre, IBM Research at Albany Nanotech (United States)
Tom Faure, IBM Mask House (United States)
Daniel Corliss, IBM Semiconductor Research and Development Ctr. (United States)
Azalia Krasnoperova, IBM Semiconductor Research and Development Ctr. (United States)
Lei Zhuang, IBM Semiconductor Research and Development Ctr. (United States)
Phil Strenski, IBM Thomas J. Watson Research Ctr. (United States)
Andreas Waechter, IBM Thomas J. Watson Research Ctr. (United States)
Laszlo Ladanyi, IBM Thomas J. Watson Research Ctr. (United States)
Francisco Barahona, IBM Thomas J. Watson Research Ctr. (United States)
Daniele Scarpazza, IBM Thomas J. Watson Research Ctr. (United States)
Jon Lee, IBM Thomas J. Watson Research Ctr. (United States)
Tadanobu Inoue, IBM Research Tokyo (Japan)
Masaharu Sakamoto, IBM Research Tokyo (Japan)
Hidemasa Muta, IBM Research Tokyo (Japan)
Alfred Wagner, IBM Thomas J. Watson Research Ctr. (United States)
Geoffrey Burr, IBM Almaden Research Ctr. (United States)
Young Kim, IBM Almaden Research Ctr. (United States)
Emily Gallagher, IBM Mask House (United States)
Mike Hibbs, IBM Mask House (United States)
Alexander Tritchkov, Mentor Graphics Corp. (United States)
Yuri Granik, Mentor Graphics Corp. (United States)
Moutaz Fakhry, Mentor Graphics Corp. (United States)
Kostas Adam, Mentor Graphics Corp. (United States)
Gabriel Berger, Mentor Graphics Corp. (United States)
Michael Lam, Mentor Graphics Corp. (United States)
Aasutosh Dave, Mentor Graphics Corp. (United States)
Nick Cobb, Mentor Graphics Corp. (United States)


Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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