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Proceedings Paper

The impacts of scanner modeling parameters for OPC model of sub-40nm memory device
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Paper Abstract

It is necessary to apply extreme illumination condition on real device as minimum feature size of the device shrinks. As k1 decrease, ultra extreme illumination has to be used. However, in case of using this illumination, CD and process windows dramatically fluctuate as pupil shapes slightly changes. For past several years, Pupil Fit Modeling (PFM) was developed in order to analyze pupil shape parameters which are independent from each others. The first object in this work is to distinguish pupil shape of different scanner by separating more parameters. According to pupil parameter analysis, the major factors of CD or process window difference between two scanner systems obviously appear. Due to correlation between pupil parameter and scanner knob, pupil parameter analysis would be clearly identified which scanner knob should be compensated. The second object is to define specification of each parameter by using analysis of CD budget for each pupil parameters. Using periodic monitoring of pupil parameter which is controlled by previous specification, scanner system in product lines can be maintained at ideal state. Additionally, OPC model accuracy enhancement should be obtained by using highly accurate fitted pupil model. Recently, other application of pupil model is reported for improvement of OPC and model based verification model accuracy. Such as modeling using average optics and hot spot detection of scanner specific model are easily adopted by using pupil fit model. Therefore, applications of pupil fit parameter for process model are very useful for improvement of model accuracy. In our study, the quantity of model accuracy enhancement using PFM is investigated and analyzed. OPC and hotspot point detection capability results with pupil fit model would be shown. Also, in this paper, trends of CD and process window for each scanner parameter are evaluated by using pupil fit model. As of results, we were able to find which pupil parameter has influence in critical layer CD and application of this result resulted in better accuracy in detecting hotspot for model based verification.

Paper Details

Date Published: 10 March 2010
PDF: 7 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 764013 (10 March 2010); doi: 10.1117/12.846710
Show Author Affiliations
Cheol-Kyun Kim, Hynix Semiconductor Inc. (Korea, Republic of)
Jong-won Jang, Hynix Semiconductor Inc. (Korea, Republic of)
Jinhyuck Jeon, Hynix Semiconductor Inc. (Korea, Republic of)
Chan-ha Park, Hynix Semiconductor Inc. (Korea, Republic of)
Hyun-jo Yang, Hynix Semiconductor Inc. (Korea, Republic of)
Donggyu Yim, Hynix Semiconductor Inc. (Korea, Republic of)
Sungki Park, Hynix Semiconductor Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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