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Proceedings Paper

Topcoat-less resist process for 2Xnm node devices
Author(s): Changil Oh; Junghyung Lee; Junggun Heo; Hyunkyung Shim; Keundo Ban; Cheolkyu Bok; Donggyu Yim; Sungki Park
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Paper Abstract

In recent years ArF immersion lithography in memory devices, topcoat process has become baseline process in mass production in spite of its additional process steps and high cost-of-ownership. In order to overcome low process efficiency of topcoat process, high throughput scanner with higher scan speed and advanced rinse modules for decreasing defectivity are under development. Topcoat-less resist is also upgraded gradually which contains hydrophobic additives enables the extreme patterning without topcoat and high speed scanning. But current topcoat-less process has not matured yet for the dark-field mask compared to bright-field because of the blob defect in unexposed area. To minimizing blob defect level both material and process sequence should be optimized effectively. The authors have focused on blob defect and litho performance of topcoat-less resist process for dark field application in 2Xnm node devices.

Paper Details

Date Published: 25 March 2010
PDF: 8 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76393A (25 March 2010); doi: 10.1117/12.846707
Show Author Affiliations
Changil Oh, Hynix Semiconductor Inc. (Korea, Republic of)
Junghyung Lee, Hynix Semiconductor Inc. (Korea, Republic of)
Junggun Heo, Hynix Semiconductor Inc. (Korea, Republic of)
Hyunkyung Shim, Hynix Semiconductor Inc. (Korea, Republic of)
Keundo Ban, Hynix Semiconductor Inc. (Korea, Republic of)
Cheolkyu Bok, Hynix Semiconductor Inc. (Korea, Republic of)
Donggyu Yim, Hynix Semiconductor Inc. (Korea, Republic of)
Sungki Park, Hynix Semiconductor Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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