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Proceedings Paper

Spacer defined double patterning for sub-72 nm pitch logic technology
Author(s): Ryoung-Han Kim; Erin Mclellan; Yunpeng Yin; John Arnold; Sivananda Kanakasabapathy; Sanjay Mehta; Yuansheng Ma; Martin Burkhardt; Jason Cain; Greg McIntyre; Matthew E. Colburn; Harry J. Levinson
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Paper Abstract

In order to extend the optical lithography into sub-72 nm pitch regime, spacer defined double patterning as a self-aligning process option was investigated. In the sidewall defined spacer process, spacer material was deposited directly on the resist to achieve process simplification and cost effectiveness. For the spacer defined double patterning, core mandrel CD uniformity is proven to be a main contributor to pitch-walking and defined a new lithographic process window. Here, the aerial image log-slope is shown to be a measurable predictor of CD uniformity and sidewall angle of the resist pattern. Through resist screening and illumination optimization, resist core-mandrel of 2.5 nm CD uniformity across a focus range more than 200 nm with ± 3.5 % exposure latitude was developed having sidewall control close to the normal. Finally etch revealed that pitch-walking post pitch split can be suppressed below 2 nm within ± 2.5 % exposure latitude.

Paper Details

Date Published: 3 March 2010
PDF: 10 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 76400F (3 March 2010); doi: 10.1117/12.846698
Show Author Affiliations
Ryoung-Han Kim, GLOBALFOUNDRIES (United States)
Erin Mclellan, IBM Research (United States)
Yunpeng Yin, IBM Research (United States)
John Arnold, IBM Research (United States)
Sivananda Kanakasabapathy, IBM Research (United States)
Sanjay Mehta, IBM Research (United States)
Yuansheng Ma, GLOBALFOUNDRIES (United States)
Martin Burkhardt, IBM Research (United States)
Jason Cain, GLOBALFOUNDRIES (United States)
Greg McIntyre, IBM Research (United States)
Matthew E. Colburn, IBM Research (United States)
Harry J. Levinson, GLOBALFOUNDRIES (United States)

Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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