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Proceedings Paper

Review on optical and electrical properties of oxide semiconductors
Author(s): Dong Lim Kim; Hyun Jae Kim
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Paper Abstract

Oxide semiconductors became one of the potential elements for large area electronics such as a channel for thin film transistors. Optical and electrical properties were modified by alloying or doping of several oxide materials; In2O3, ZnO, Ga2O3, and SnO2. The excellent properties achieved at the ternary or quaternary alloys could be explained by the role of each materials as a carrier controller, a conduction path, and etc. The metal oxide semiconductors were generally deposited by vacuum process but recently, alternative ways, like a sol-gel or an ink-jet printing, are suggested. In this review, diverse approaches on oxide semiconductors are shown, and an in-depth discussion of the optical and electrical properties alternation in metal oxide alloy fabricated by various methods is given.

Paper Details

Date Published: 15 February 2010
PDF: 9 pages
Proc. SPIE 7603, Oxide-based Materials and Devices, 760313 (15 February 2010); doi: 10.1117/12.846661
Show Author Affiliations
Dong Lim Kim, Yonsei Univ. (Korea, Republic of)
Hyun Jae Kim, Yonsei Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7603:
Oxide-based Materials and Devices
Ferechteh Hosseini Teherani; David C. Look; Cole W. Litton; David J. Rogers, Editor(s)

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