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Proceedings Paper

Monitoring of critical dimensions in the sidewall-transferred double-patterning process using scatterometry
Author(s): Keisuke Tanaka; Joungchel Lee
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Paper Abstract

Due to immaturity of extreme ultra violet (EUV) lithography and resolution limitation of 193 nm immersion lithography for 32 nm node and beyond, various double patterning processes have been developed as an alternative process to shrink device size other than improving resolution of photo lithography. Double patterning has been accepted as a process bridging between 193 nm immersion and EUV lithographic process for 32 nm and 22 nm nodes. Recently, a sidewall-transferred double-patterning process has been introduced to reduce cost and keep enough process margins in device fabrication. For the development of the double patterning process and deployment of the double patterning process to fabrication lines, it is necessary to monitor and control the critical dimensions and profile shapes in the double patterning process. In this paper, we report monitoring of critical dimensions and profile shapes at several process steps of the double patterning process using spectroscopic ellipsometry based scatterometry.

Paper Details

Date Published: 1 April 2010
PDF: 6 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76382W (1 April 2010); doi: 10.1117/12.846641
Show Author Affiliations
Keisuke Tanaka, Tokyo Electron Ltd. (Japan)
Joungchel Lee, Timbre Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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