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3D physical modeling for patterning process development
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Paper Abstract

In this paper we will demonstrate how a 3D physical patterning model can act as a forensic tool for OPC and ground-rule development. We discuss examples where the 2D modeling shows no issues in printing gate lines but 3D modeling shows severe resist loss in the middle. In absence of corrective measure, there is a high likelihood of line discontinuity post etch. Such early insight into process limitations of prospective ground rules can be invaluable for early technology development. We will also demonstrate how the root cause of broken poly-line after etch could be traced to resist necking in the region of STI step with the help of 3D models. We discuss different cases of metal and contact layouts where 3D modeling gives an early insight in to technology limitations. In addition such a 3D physical model could be used for early resist evaluation and selection for required ground-rule challenges, which can substantially reduce the cycle time for process development.

Paper Details

Date Published: 2 April 2010
PDF: 9 pages
Proc. SPIE 7641, Design for Manufacturability through Design-Process Integration IV, 76410B (2 April 2010); doi: 10.1117/12.846637
Show Author Affiliations
Chandra Sarma, Infineon Technologies NA (United States)
Amr Abdo, IBM Microelectronics (United States)
Todd Bailey, IBM Microelectronics (United States)
Will Conley, Freescale Semiconductor, Inc.\ (United States)
Derren Dunn, IBM Microelectronics (United States)
Sajan Marokkey, Infineon Technologies NA (United States)
Mohamed Talbi, IBM Microelectronics (United States)

Published in SPIE Proceedings Vol. 7641:
Design for Manufacturability through Design-Process Integration IV
Michael L. Rieger; Joerg Thiele, Editor(s)

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