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Proceedings Paper

Automatic numerical determination of lateral influence functions for fast-CAD
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Paper Abstract

This paper presents kernel convolution with pattern matching (KCPM), which is an updated version of fast-CAD pattern matching for assessing lithography process variations. With KCPM, kernels that capture lateral feature interaction between features due to process variations are convolved with a mask layout to calculate a match factor, which indicates approximate change in intensity at the target location. The algorithm incorporates a custom source, a mask with electromagnetic effects, and an arbitrary pupil function. For further accuracy improvement, we introduce a source splitting technique. Though the evaluation speed is decreased, R2 correlation of the match factor and change in intensity is increased. Results are shown with R2 correlation as high as 0.99 for nearly coherent and annular illumination. Additionally, with a numerical aperture of 1.35, unbalanced quadrapole illumination, 10mλ RMS random aberration in projection optics and complex mask with EMF effects included, R2 correlation of more than 0.87 is achieved. This process is extremely fast (40μs per location) making it valuable for a wide range of applications, most commonly hot spot detection and optimization.

Paper Details

Date Published: 10 March 2010
PDF: 11 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 764031 (10 March 2010); doi: 10.1117/12.846630
Show Author Affiliations
Marshal A. Miller, Univ. of California, Berkeley (United States)
Kenji Yamazoe, Univ. of California, Berkeley (United States)
Canon Inc. (Japan)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)


Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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