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Proceedings Paper

Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices
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Paper Abstract

An all-optical switching device has been proposed by using self-assembled InAs/GaAs quantum dots (QDs) within a vertical cavity structure for ultrafast optical communications. This device has several desirable properties, such as the ultra-low power consumption, the micrometre size, and the polarization insensitive operation. Due to the threedimensional confined carrier state and the broad size distribution of self-assembled InAs/GaAs QDs, it is crucial to enhance the interaction between QDs and the cavity with appropriately designed 1D periodic structure. Significant QD/cavity nonlinearity is theoretically observed by increasing the GaAs/AlAs pair number of the bottom mirror. By this consideration, we have fabricated vertical-reflection type QD switches with 12 periods of GaAs/Al0.8Ga0.2As for the top mirror and 25 periods for the bottom mirror to give an asymmetric vertical cavity. Optical switching via the QD excited state exhibits a fast switching process with a time constant down to 23 ps, confirming that the fast intersubband relaxation of carriers inside QDs is an effective means to speed up the switching process. A technique by changing the light incident angle realizes wavelength tunability over 30 nm for the QD/cavity switch.

Paper Details

Date Published: 16 February 2010
PDF: 10 pages
Proc. SPIE 7610, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII, 76100Q (16 February 2010); doi: 10.1117/12.846621
Show Author Affiliations
C. Y. Jin, Kobe Univ. (Japan)
O. Kojima, Kobe Univ. (Japan)
T. Inoue, Kobe Univ. (Japan)
T. Kita, Kobe Univ. (Japan)
O. Wada, Kobe Univ. (Japan)
M. Hopkinson, The Univ. of Sheffield (United Kingdom)
K. Akahane, National Institute of Information and Communications Technology (Japan)


Published in SPIE Proceedings Vol. 7610:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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