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Proceedings Paper

Full wafer macro-CD imaging for excursion control of fast patterning processes
Author(s): Lars Markwort; Christoph Kappel; Reza Kharrazian; Pierre-Yves Guittet
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Paper Abstract

A powerful new inspection technology enables the excursion control of fast patterning processes. Full images of 300mm wafers are captured and processed to extract CD uniformity information of contact hole and line-space patterns. Suitable masking filters are applied to process and analyze the information from active logic and/or memory areas separately. Characteristic process tool signatures can then be detected based on die, exposure field and wafer-level pattern variations. Based on inspection times of a few seconds per wafer, rapid monitoring of 100% of processed wafers at full surface is feasible. CD-imaging is demonstrated for the monitoring of key patterning process steps in gate formation. Use cases for stand-alone, integrated and smart sampling strategies are discussed.

Paper Details

Date Published: 1 April 2010
PDF: 9 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763807 (1 April 2010); doi: 10.1117/12.846618
Show Author Affiliations
Lars Markwort, Nanda Technologies GmbH (Germany)
Christoph Kappel, Nanda Technologies GmbH (Germany)
Reza Kharrazian, Nanda Technologies GmbH (Germany)
Pierre-Yves Guittet, Nanda Technologies GmbH (Germany)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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