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Proceedings Paper

532 nm laser sources based on intracavity frequency doubling of multi-edge-emitting diode lasers
Author(s): Kang Li; N. J. Copner; C. B. E. Gawith; Ian G. Knight; Hans-Ulrich Pfeiffer; Bob Musk
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Paper Abstract

Intra-cavity frequency doubling (ICFD) of electrically and optically surface emitting diode lasers in the near IR region become more interesting [1-3] and will have an enormous impact in the display market. In this paper, Watts-level green laser is generated by ICFD of multi-emitters laser bar using a MgO-doped periodically poled lithium niobate (MgO: PPLN) bulk crystal, which has the potential to be scalable to high production volumes and low costs with immense implication for laser-based projection displays.

Paper Details

Date Published: 17 February 2010
PDF: 6 pages
Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 757812 (17 February 2010); doi: 10.1117/12.846565
Show Author Affiliations
Kang Li, Univ. of Glamorgan (United Kingdom)
N. J. Copner, Univ. of Glamorgan (United Kingdom)
C. B. E. Gawith, Covesion Ltd. (United Kingdom)
Ian G. Knight, Bookham Technology plc (United Kingdom)
Hans-Ulrich Pfeiffer, Bookham (Switzerland) AG (Switzerland)
Bob Musk, Gooch & Housego, Torquay (United Kingdom)

Published in SPIE Proceedings Vol. 7578:
Solid State Lasers XIX: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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