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Proceedings Paper

CD-uniformity for 45nm NV memory on product-stack
Author(s): Umberto Iessi; Brian Colombo; Johannes Plauth; Benedetta Triulzi; Elio De Chiara; Paolo Canestrari
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Paper Abstract

CD uniformity budget for a 45-nm NV memory device requires the analysis and compensation of each single contributor factor. A dedicated simulation tool "CDU Predictor" helps to quantify the impact of main scanner and process factors for a comprehensive study of the CD Uniformity for an ideal flat wafer. However this analysis could under estimate the real CD distribution on a real production wafer if artefacts induced by thin-film effects and underling device topography significantly increase the contribution of the optical leveling-device to the total focus-error and hence spread the CD distribution for processes with low DOF. Such artefacts can be eliminated by application of an offset-map obtained by probing the mechanical top-surface of the resist-stack with an AirGauge (AirGaugeImprovedLEvelling, AGILE). The systematic variation of CD across the wafer, no matter whether due to fingerprints of the reticle, the device-topography, the track-process or the exposure-tool, can be mapped into dose-corrections for compensation (DoseMapper). We discuss an experimental case with a combination of both tools for an effective CD Uniformity optimization.

Paper Details

Date Published: 3 March 2010
PDF: 8 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 76403I (3 March 2010); doi: 10.1117/12.846538
Show Author Affiliations
Umberto Iessi, Numonyx (Italy)
Brian Colombo, Numonyx (Italy)
Johannes Plauth, ASML Italy srl (Italy)
Benedetta Triulzi, Numonyx (Italy)
Elio De Chiara, Numonyx (Italy)
Paolo Canestrari, Numonyx (Italy)

Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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