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Proceedings Paper

Resist pattern prediction at EUV
Author(s): John J. Biafore; Mark D. Smith; Eelco van Setten; Tom Wallow; Patrick Naulleau; David Blankenship; Stewart A. Robertson; Yunfei Deng
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Paper Abstract

Accurate and flexible simulation methods may be used to further a researcher's understanding of how complex resist effects influence the patterning of critical structures. In this work, we attempt to gain insight into the behavior of a state-of-the-art EUV resist through the use of stochastic resist simulation. The statistics of photon and molecule counting are discussed. A discrete, probabilistic ionization and electron scattering simulator for acid generation at EUV is discussed. At EUV, acid generators are hypothesized to be activated by secondary electrons yielded by ionization of the resist upon absorption of photons. Model fit to experimental data of mean CD and LWR for a state-of-the-art EUV resist is shown.

Paper Details

Date Published: 20 March 2010
PDF: 10 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360R (20 March 2010); doi: 10.1117/12.846535
Show Author Affiliations
John J. Biafore, KLA-Tencor Texas (United States)
Mark D. Smith, KLA-Tencor Texas (United States)
Eelco van Setten, ASML Netherlands B.V. (Netherlands)
Tom Wallow, GLOBALFOUNDRIES Inc. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
David Blankenship, KLA-Tencor Texas (United States)
Stewart A. Robertson, KLA-Tencor Texas (United States)
Yunfei Deng, GLOBALFOUNDRIES Inc. (United States)

Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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