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Proceedings Paper

A three-phase time-correlation image sensor using pinned photodiode active pixels
Author(s): Sangman Han; Tomohiro Iwahori; Tomonari Sawada; Shoji Kawahito; Shigeru Ando
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Paper Abstract

A time correlation (TC) image sensor is a device that produces 3-phase time-correlated signals between the incident light intensity and three reference signals. A conventional implementation of the TC image sensor using a standard CMOS technology works at low frequency and with low sensitivity. In order to achieve higher modulation frequency and high sensitivity, the TC image sensor with a dual potential structure using a pinned diode is proposed. The dual potential structure is created by changing the impurity doping concentration in the two different potential regions. In this structure, high-frequency modulation can be achieved, while maintaining a sufficient light receiving area. A prototype TC image sensor with 366×390pixels is implemented with 0.18-μm 1P4M CMOS image sensor technology. Each pixel with the size of 12μm×12μm has one pinned photodiode with the dual potential structure, 12 transistors and 3capacitors to implement three-parallel-output active pixel circuits. A fundamental operation of the implemented TC sensor is demonstrated.

Paper Details

Date Published: 26 January 2010
PDF: 7 pages
Proc. SPIE 7536, Sensors, Cameras, and Systems for Industrial/Scientific Applications XI, 75360S (26 January 2010); doi: 10.1117/12.846532
Show Author Affiliations
Sangman Han, Shizuoka Univ. (Japan)
Tomohiro Iwahori, Shizuoka Univ. (Japan)
Tomonari Sawada, Shizuoka Univ. (Japan)
Shoji Kawahito, Shizuoka Univ. (Japan)
Shigeru Ando, The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 7536:
Sensors, Cameras, and Systems for Industrial/Scientific Applications XI
Erik Bodegom; Valérie Nguyen, Editor(s)

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