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Proceedings Paper

Comparison of different template structures for high quality and self-separation thick GaN growth
Author(s): Yen-Hsiang Fang; Chu-Li Chao; Tung-Wei Chi; Kuei-Ming Chen; Po-Chun Liu; Jenq-Dar Tsay
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Paper Abstract

Two different template structures of dot air-bridges and nanorods were used for 300 µm GaN growth by hydride vapor phase epitaxy (HVPE). The selective growth of arrays of dot air-bridges and nanorods whose sidewalls coated with SiO2 are identified and exploited to form a compliant layer to decouple the impact due to the different thermal expansion and lattice mismatch between 300 µm overgrown GaN layer and the host sapphire substrate. As the process temperature cooling down from 1050 °C to room temperature in HVPE system, the 300 μm freestanding GaN substrates were obtained by the self-separation. The dislocation density was estimated by both the etching pit density method and cathodoluminescence (CL). The dislocation densities of the freestanding bulk GaN were lower than 5×106 and 5×107 cm-2 for the template structure of dot air-bridges and nanorods structure, respectively.

Paper Details

Date Published: 17 March 2010
PDF: 8 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760221 (17 March 2010); doi: 10.1117/12.846513
Show Author Affiliations
Yen-Hsiang Fang, Industrial Technology Research Institute (Taiwan)
Chu-Li Chao, Industrial Technology Research Institute (Taiwan)
Tung-Wei Chi, Industrial Technology Research Institute (Taiwan)
Kuei-Ming Chen, Industrial Technology Research Institute (Taiwan)
Po-Chun Liu, Industrial Technology Research Institute (Taiwan)
Jenq-Dar Tsay, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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