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Proceedings Paper

Analysis of trade-off relationships in resist patterns delineated using SFET of Selete
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Paper Abstract

We investigated the relationship between line edge roughness (LER) and the chemical gradient using the fourth Selete Standard Resist (SSR4). Two-dimensional (half-pitch and exposure dose) matrices of resist line width and LER were analyzed on the basis of the sensitization mechanisms of chemically amplified resists for extreme ultraviolet (EUV) lithography. The latent images of resist patterns were successfully reproduced by assuming that LER is inversely proportional to the chemical gradient. The product of LER and normalized chemical gradient was approximately 0.2 for SSR4.

Paper Details

Date Published: 26 March 2010
PDF: 7 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390B (26 March 2010); doi: 10.1117/12.846500
Show Author Affiliations
Takahiro Kozawa, Osaka Univ. (Japan)
Hiroaki Oizumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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