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Proceedings Paper

The optimizations of resist shrink process using track-based technology
Author(s): Yoshihiro Kondo; Atsushi Ookouchi; Toyohisa Tsuruda; Masahiro Yamamoto; Takasi Saito; Tsuyoshi Shibata; Satoru Shimura; Fumiko Iwao; Ben Rathsack; Michael Carcasi
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Paper Abstract

The development of double patterning processes/schemes are widely in progress for 2x nm node and beyond by using 193nm immersion lithography. It is realized that a resist shrink step is necessary in many double patterning process cases due to the resolution limit of the 193nm immersion exposure tool. As the development work progresses into the mass-product transition phase, the requirement for technical performances has become more difficult to be achieved by existing resist shrink technologies. In order to overcome these difficulties, we have developed "wet slimming" process based on our coater/developer technologies including the platform. The process is optimized for CD uniformity and defectivity. The process also has good robustness to the various possible resist materials and/or exposure conditions used by industry. In this paper, we introduce the scheme of wet slimming process together with basic performance data such as CD controllability, CD uniformity, defectivity and I-D bias. The evaluation data on actual double patterning processed wafers is reported as well.

Paper Details

Date Published: 29 March 2010
PDF: 8 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390X (29 March 2010); doi: 10.1117/12.846497
Show Author Affiliations
Yoshihiro Kondo, Tokyo Electron Kyushu Ltd. (Japan)
Atsushi Ookouchi, Tokyo Electron Kyushu Ltd. (Japan)
Toyohisa Tsuruda, Tokyo Electron Kyushu Ltd. (Japan)
Masahiro Yamamoto, Tokyo Electron Kyushu Ltd. (Japan)
Takasi Saito, Tokyo Electron Kyushu Ltd. (Japan)
Tsuyoshi Shibata, Tokyo Electron Kyushu Ltd. (Japan)
Satoru Shimura, Tokyo Electron Kyushu Ltd. (Japan)
Fumiko Iwao, Tokyo Electron Kyushu Ltd. (Japan)
Ben Rathsack, Tokyo Electron America (United States)
Michael Carcasi, Tokyo Electron America (United States)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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