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Proceedings Paper

Double patterning lithography study with high overlay accuracy
Author(s): Takahisa Kikuchi; Yosuke Shirata; Masahiko Yasuda; Yasuhiro Iriuchijima; Kengo Takemasa; Ryo Tanaka; Andrew Hazelton; Yuuki Ishii
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Paper Abstract

Double patterning (DP) has become the most likely candidate to extend immersion lithography to the 32 nm node and beyond. This paper focuses on experimental results of 32nm half pitch patterning using NSR-S620D, the latest Nikon ArF immersion scanner. A litho-freeze-litho (LFL) process was employed for this experiment. Experimental results of line CDU, space CDU, and overlay accuracy are presented. Finally, a budget for pitch splitting DP at the 22 nm half pitch is presented.

Paper Details

Date Published: 10 March 2010
PDF: 9 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 76400H (10 March 2010); doi: 10.1117/12.846486
Show Author Affiliations
Takahisa Kikuchi, Nikon Corp. (Japan)
Yosuke Shirata, Nikon Corp. (Japan)
Masahiko Yasuda, Nikon Corp. (Japan)
Yasuhiro Iriuchijima, Nikon Corp. (Japan)
Kengo Takemasa, Nikon Corp. (Japan)
Ryo Tanaka, Nikon Corp. (Japan)
Andrew Hazelton, Nikon Corp. (Japan)
Yuuki Ishii, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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