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Proceedings Paper

Novel approaches to controlling photo-resist CD in double patterning processes
Author(s): Kazuo Yabe; Kazuhide Hasebe; Shigeru Nakajima; Hiroki Murakami; Arisa Hara; Shoichi Yamauchi; Sakurako Natori; Kenichi Oyama; Hidetami Yaeasghi
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Paper Abstract

Numerical aperture (NA) has been significantly improved to 1.35 by the introduction of water-based immersion 193-nm exposure tools, but the realistic minimum feature size is still limited to 40 nm even with the help of robust resolution enhancement techniques (RETs). Double patterning processes are techniques that can be used for fabricating etching mask patterns for 32-nm nodes and possibly for 22-nm nodes as well, but the aspect ratio of such etching mask patterns have been reduced with scaling. At the same time, dramatic improvements in the etching durability of photo resist have not been made. This paper introduces a robust pattern-slimming process that maintains pattern height.

Paper Details

Date Published: 30 March 2010
PDF: 8 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391U (30 March 2010); doi: 10.1117/12.846468
Show Author Affiliations
Kazuo Yabe, Tokyo Electron Ltd. (Japan)
Kazuhide Hasebe, Tokyo Electron AT Ltd. (Japan)
Shigeru Nakajima, Tokyo Electron AT Ltd. (Japan)
Hiroki Murakami, Tokyo Electron AT Ltd. (Japan)
Arisa Hara, Tokyo Electron Ltd. (Japan)
Shoichi Yamauchi, Tokyo Electron Ltd. (Japan)
Sakurako Natori, Tokyo Electron Ltd. (Japan)
Kenichi Oyama, Tokyo Electron Ltd. (Japan)
Hidetami Yaeasghi, Tokyo Electron Ltd. (Japan)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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