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Proceedings Paper

Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source
Author(s): Akira Sasaki; Katsunobu Nishihara; Atsushi Sunahara; Hiroyuki Furukawa; Takeshi Nishikawa; Fumihiro Koike
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Paper Abstract

We show an atomic model of Sn for the EUV sources. We show an improvement of the model in terms of the selection of energy levels and correction of the wavelength of the emission lines including resonance and satellite lines of combined 4d-4f and 4p-4d transition arrays. Calculated spectrum agrees well with experiments, showing that the present model is useful both for theoretical investigation of the optimum conditions the EUV sources, and for the analysis of experimental spectrum. A modeling method to estimate the initial spatial profile of the discharge path for the analysis of laser-assisted discharge pumped plasma sources is also proposed.

Paper Details

Date Published: 22 March 2010
PDF: 8 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76363D (22 March 2010); doi: 10.1117/12.846467
Show Author Affiliations
Akira Sasaki, Japan Atomic Energy Research Institute (Japan)
Katsunobu Nishihara, Osaka Univ. (Japan)
Atsushi Sunahara, Osaka Univ. (Japan)
Hiroyuki Furukawa, Osaka Univ. (Japan)
Takeshi Nishikawa, Okayama Univ. (Japan)
Fumihiro Koike, Kitasato Univ. (Japan)

Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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