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Proceedings Paper

Three-dimensional physical photoresist model calibration and profile-based pattern verification
Author(s): Mohamed Talbi; Amr Y. Abdo; Todd C. Bailey; Will Conley; Derren N. Dunn; Masashi Fujimoto; John Nickel; No Young Chung; Sajan Marokkey; Si Hyeung Lee; Chandrasekhar Sarma; Dongbing Shao; Ramya Viswanathan
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Paper Abstract

In this paper, we report large scale three-dimensional photoresist model calibration and validation results for critical layer models that span 32 nm, 28 nm and 22 nm technology nodes. Although methods for calibrating physical photoresist models have been reported previously, we are unaware of any that leverage data sets typically used for building empirical mask shape correction models. . A method to calibrate and verify physical resist models that uses contour model calibration data sets in conjuction with scanning electron microscope profiles and atomic force microscope profiles is discussed. In addition, we explore ways in which three-dimensional physical resist models can be used to complement and extend pattern hot-spot detection in a mask shape validation flow.

Paper Details

Date Published: 12 March 2010
PDF: 13 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 76401D (12 March 2010); doi: 10.1117/12.846466
Show Author Affiliations
Mohamed Talbi, IBM Corp. (United States)
Amr Y. Abdo, IBM Corp. (United States)
Todd C. Bailey, IBM Corp. (United States)
Will Conley, Freescale Semiconductor, Inc. (United States)
Derren N. Dunn, IBM Corp. (United States)
Masashi Fujimoto, NEC Electronics (United States)
John Nickel, IBM Corp. (United States)
No Young Chung, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sajan Marokkey, Infineon Technologies (United States)
Si Hyeung Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chandrasekhar Sarma, Infineon Technologies (United States)
Dongbing Shao, IBM Corp. (United States)
Ramya Viswanathan, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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