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Proceedings Paper

Evaluation of hydroxyl derivatives for chemically amplified extreme ultraviolet resist
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Paper Abstract

Extreme ultraviolet (EUV) lithography is the most favorable process for high volume manufacturing of semiconductor devices at 22nm half-pitch and below. Many efforts have revealed that the phenolic hydroxyl groups of polymers are also an effective proton source in acid generation in EUV resists, and the effective proton generation and the control of the generated acid diffusion are required to improve the breakthrough of the resolution - line width roughness - sensitivity (RLS) trade-off. To clarify the lithographic performance of these derivatives, we synthesized the acrylic terpolymers containing phenolic and alcoholic hydroxyl derivatives as model photopolymers and exposed the resist samples based on these polymers to EUV and electron beam (EB) radiation. On the basis of the lithographic performances of these resist samples, we evaluated the characteristics of phenolic and alcoholic derivatives upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.

Paper Details

Date Published: 30 March 2010
PDF: 12 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391L (30 March 2010); doi: 10.1117/12.846460
Show Author Affiliations
Kikuo Furukawa, Mitsubishi Gas Chemical Co., Inc. (Japan)
Yoshihisa Arai, Mitsubishi Gas Chemical Co., Inc. (Japan)
Hiroki Yamamoto, Osaka Univ. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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