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Proceedings Paper

LER detection using dark field spectroscopic reflectometry
Author(s): Boaz Brill; Shahar Gov; Dani Hak; Valery Sorin; Tal Marcu; Benjamin Bunday
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Paper Abstract

Line edge roughness (LER) is an increasingly important issue as lithography scales down. Currently LER is usually measured using scanning electron microscopy (SEM) tools; however, using optical techniques to measure LER may have potential benefit due to less resist damage and higher throughput. In this paper, we explore the detection and potential measurement of LER using dark field spectroscopic reflectometry. We provide a proof of feasibility by showing LER spectra collected on several different applications, which behave consistently with scattering from small particles (Rayleigh) and decrease sharply with wavelength. Additionally, the dependence of the spectra on film thickness bears resemblance to thin film measurements. Finally, we also provide preliminary simulation results showing similar spectral characteristics to the measured spectra.

Paper Details

Date Published: 1 April 2010
PDF: 10 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76380P (1 April 2010); doi: 10.1117/12.846449
Show Author Affiliations
Boaz Brill, Nova Measuring Instruments Ltd. (Israel)
Shahar Gov, Nova Measuring Instruments Ltd. (Israel)
Dani Hak, Nova Measuring Instruments Ltd. (Israel)
Valery Sorin, Nova Measuring Instruments Ltd. (Israel)
Tal Marcu, Nova Measuring Instruments Ltd. (Israel)
Benjamin Bunday, International SEMATECH Manufacturing Initiative (United States)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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