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Proceedings Paper

Development of EUV resists based on various new materials
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Paper Abstract

This paper summarizes the development of EUV resists based on various new materials: the lithographic evaluation results of EUV resists from resist material manufacturers using the small field exposure tool (SFET). We discuss the screening results of new resin materials based on calix[4]resorcinarene, "Noria" and fullerene.

Paper Details

Date Published: 26 March 2010
PDF: 8 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390R (26 March 2010); doi: 10.1117/12.846429
Show Author Affiliations
Hiroaki Oizumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kazuyuki Matsumaro, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julius Santillan, Semiconductor Leading Edge Technologies, Inc. (Japan)
Gousuke Shiraishi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kentaro Matsunaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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