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Proceedings Paper

Thin film edge emitting lasers integrated onto silicon
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Paper Abstract

The integration of thin film edge emitting lasers onto silicon enables the realization of planar photonic structures for interconnection and for miniaturized optical systems that can be integrated in their entirety at the chip scale. These thin film emitters are compound semiconductor lasers that are optimized for operation without the growth substrate. Removal of the laser growth substrate, coupled with bonding to the silicon host substrate, enable the integration of high quality edge emitting lasers with silicon. This paper explores the challenges, approaches, fabrication processes, and progress in the integration of thin film edge emitting lasers integrated onto silicon.

Paper Details

Date Published: 12 February 2010
PDF: 12 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160S (12 February 2010); doi: 10.1117/12.846414
Show Author Affiliations
Nan Marie Jokerst, Duke Univ. (United States)
Sabarni Palit, Duke Univ. (United States)
Jeremy Kirch, Univ. of Wisconsin-Madison (United States)
Gene Tsvid, Univ. of Wisconsin-Madison (United States)
Luke Mawst, Univ. of Wisconsin-Madison (United States)
Thomas Kuech, Univ. of Wisconsin-Madison (United States)


Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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