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Proceedings Paper

Negative-tone chemically amplified molecular resist based on novel fullerene derivative for nanolithography
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Paper Abstract

We developed negative-tone chemically amplified molecular resists based on a fullerene derivative and evaluated the lithographic performance using 75 keV electron beam (EB) exposure tool to explore the potential of fullerene derivatives as a negative-type EB resist with high resolution and high etching durability. The etching rate of fullerene derivatives is lower than that of conventional resist materials such as PHS, ZEP530 and UVIII. Although a dose of 800 μC/cm2 is required, 60 nm line resolution and aspect ratio five was obtained in best of four kinds of fullerene derivative films. Also, the effect of acid generators to a fullerene derivative resists were investigated. Fullerene derivative resists are a promising candidate for nanolithography because it is essential for next generation lithography to have high aspect ratio related collapse of high resolution pattern and high etching durability in ultra-thin films.

Paper Details

Date Published: 29 March 2010
PDF: 8 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390U (29 March 2010); doi: 10.1117/12.846391
Show Author Affiliations
Hiroki Yamamoto, Osaka Univ. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)
Tomoyuki Ando, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Katsumi Ohmori, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Mitsuru Sato, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Junichi Onodera, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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