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Proceedings Paper

Mesh patterning process for 40nm contact hole
Author(s): Kilyoung Lee; Cheolkyu Bok; Jaeheon Kim; Hyunkyung Shim; Junggun Heo; Junghyung Lee; Hyeong-Soo Kim; Donggu Yim; Sung-Ki Park
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Paper Abstract

Contact hole patterning is more difficult than line/space patterning as mask error factor is higher in contact hole patterning which has 2-dimensional patterns. As the industry moves towards 40nm node and beyond, the challenges associated with contact hole having a manufacturable process window have become increasingly difficult. Current 1.35NA ArF lithography is capable of printing 50nm contact hole with a stable process window at best. Conventional contact hole patterning processes such as resist reflow and RELACS are no longer able to be used for half-pitch 40nm contact hole pattern because we have to shrink not only hole diameter but also pattern pitch. In this paper, we will demonstrate and compare the patterning performance of the mesh patterning processes including litho-etch-litho-etch, cap freezing and self freezing process.

Paper Details

Date Published: 31 March 2010
PDF: 8 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391S (31 March 2010); doi: 10.1117/12.846388
Show Author Affiliations
Kilyoung Lee, Hynix Semiconductor Inc. (Korea, Republic of)
Cheolkyu Bok, Hynix Semiconductor Inc. (Korea, Republic of)
Jaeheon Kim, Hynix Semiconductor Inc. (Korea, Republic of)
Hyunkyung Shim, Hynix Semiconductor Inc. (Korea, Republic of)
Junggun Heo, Hynix Semiconductor Inc. (Korea, Republic of)
Junghyung Lee, Hynix Semiconductor Inc. (Korea, Republic of)
Hyeong-Soo Kim, Hynix Semiconductor Inc. (Korea, Republic of)
Donggu Yim, Hynix Semiconductor Inc. (Korea, Republic of)
Sung-Ki Park, Hynix Semiconductor Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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