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Proceedings Paper

Sub-50-nm measurements using a 193-nm angle-resolved scatterfield microscope
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Paper Abstract

Resist-on-silicon sub-50-nm critical dimension targets have been investigated using a 193 nm angle-resolved scatterfield microscope (ARSM). The illumination path of this microscope allows customization of the conjugate back focal plane (CBFP) while separate collection paths permit both high-magnification and Fourier-plane imaging. Aspects of the calibration of this microscope are presented. Full-field, Fourier-plane images are collected as individual targets are illuminated using a field-of-view smaller than the target size; the range of incident polar angles corresponds to the numerical aperture (NA) of the objective, NA = 0.08 to 0.74. Next, angle-resolved scatterfield high-magnification imaging of these same targets are acquired in a conical mounting configuration by scanning the 12 mm diameter CBFP with a 1 mm diameter aperture. The results of these measurements and the prospects for quantitative, simultaneous measurement of multiple targets are discussed.

Paper Details

Date Published: 1 April 2010
PDF: 8 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76381E (1 April 2010); doi: 10.1117/12.846383
Show Author Affiliations
R. Quintanilha, National Institute of Standards and Technology (United States)
Y. J. Sohn, KT Consulting Inc. (United States)
B. M. Barnes, KT Consulting Inc. (United States)
R. Silver, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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