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Proceedings Paper

Growth and characterization of ZnO-based buffer layers for CIGS solar cells
Author(s): T. Törndahl; A. Hultqvist; C. Platzer-Björkman; M. Edoff
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Paper Abstract

ZnO-based compounds are of interest as buffer layers in Cu(In,Ga)Se2 (CIGS) solar cells, due to the ability to change the electrical and optical properties of ZnO by addition of other elements. The device structure of a CIGS solar cell is; soda-lime glass/Mo/CIGS/buffer layer/ZnO/ZnO:Al. This contribution treats growth and characterization of Zn1-xMgxO and Zn(O,S) on glass substrates and as buffer layers in CIGS solar cell devices. The ZnO-based compounds are grown by atomic layer deposition at deposition temperatures below 200 °C using metal-organic precursors.

Paper Details

Date Published: 15 February 2010
PDF: 9 pages
Proc. SPIE 7603, Oxide-based Materials and Devices, 76030D (15 February 2010); doi: 10.1117/12.846351
Show Author Affiliations
T. Törndahl, Uppsala Univ. (Sweden)
A. Hultqvist, Uppsala Univ. (Sweden)
C. Platzer-Björkman, Uppsala Univ. (Sweden)
M. Edoff, Uppsala Univ. (Sweden)


Published in SPIE Proceedings Vol. 7603:
Oxide-based Materials and Devices
Ferechteh Hosseini Teherani; David C. Look; Cole W. Litton; David J. Rogers, Editor(s)

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