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Proceedings Paper

Impact of EUV mask absorber defect with pattern-roughness on lithographic images
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Paper Abstract

Impact of EUV mask absorber defect with pattern-roughness on lithographic images was studied. In order to reduce systematic line width roughness (LWR) of wafer printed pattern, mask making process was improved; and in order to reduce random LWR, low line edge roughness (LER) resist material and a CD averaging method of multiple exposure shots were introduced. Then by using a Small Field Exposure Tool (SFET), mask induced systematic printed LWR was quantified and estimated at 32nm HP and 28nm HP. The measurement results of the critical mask absorber defect size were compared with simulation; and the results are then discussed.

Paper Details

Date Published: 20 March 2010
PDF: 12 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360L (20 March 2010); doi: 10.1117/12.846347
Show Author Affiliations
Takashi Kamo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hajime Aoyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yukiyasu Arisawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Mihoko Kijima, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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