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Proceedings Paper

New measurement technology for CD and pattern profile variation using optical Fourier space
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Paper Abstract

As well as measuring CD, monitoring pattern profile is becoming important for semiconductor metrology. Illuminating the wafer and detecting the reflective light, reflective light intensity in the Fourier space includes the information of CD and pattern profile variation by form birefringence effect. CD change and profile variation could be detected separately for the actual wafer. Mathematical simulation is presented the background of our unique approach. The detail results of CD and pattern profile monitor is shown in this paper.

Paper Details

Date Published: 2 April 2010
PDF: 9 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76380E (2 April 2010); doi: 10.1117/12.846336
Show Author Affiliations
Fuminori Hayano, Nikon Corp. (Japan)
Akitoshi Kawai, Nikon Corp. (Japan)
Toshio Uchikawa, Nikon Corp. (Japan)
Kazumasa Endo, Nikon Corp. (Japan)
Kiminori Yoshino, Toshiba Corp. (Japan)
Yuuichiro Yamazaki, Toshiba Corp. (Japan)
Kuniharu Nagashima, Toshiba Corp. (Japan)
Kenji Tsuchiya, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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