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Proceedings Paper

Improvement of EUV mask defect printability evaluation
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Paper Abstract

As regard to EUV-Mask natural defect printability evaluation, several methods have been employed in the past. However, because of their inherent difficulties those methods have not been able to provide precise answers. In this paper, we used two improved methods for the evaluation of EUV-Mask natural defect printability capable of providing precise answers. One improvement involves marking of the defect locations which makes it easier to find the wafer printed defects; the other method involves CD-averaging of multiple exposure shots that results in more quantifiable answers.

Paper Details

Date Published: 23 March 2010
PDF: 9 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763621 (23 March 2010); doi: 10.1117/12.846333
Show Author Affiliations
Noriaki Takagi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Shigemura, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuyoshi Amano, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takashi Kamo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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