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Proceedings Paper

Development of EUV resist for 22nm half pitch and beyond
Author(s): Ken Maruyama; Makoto Shimizu; Yuuki Hirai; Kouta Nishino; Tooru Kimura; Toshiyuki Kai; Kentaro Goto; Shalini Sharma
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Paper Abstract

In order to achieve targeted resist performance for EUV in practical applications, we have developed new materials such as molecular glass (MG), PAG, and acid amplifiers (AA). Protected NORIA, a molecular glass, was examined for extending resolution limits. The resist with protected NORIA showed 22 nm hp resolutions under EUV exposure. PAG acid diffusion effect on LWR was also investigated. It was found that acid diffusion control was one of the most important factors for LWR improvement. To improve sensitivity, application of AA (acid amplifier) was investigated. The resist with AA gained 25% sensitivity improvement over the original formulation. Elemental technologies for major progress of EUV resist were made.

Paper Details

Date Published: 20 March 2010
PDF: 8 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360T (20 March 2010); doi: 10.1117/12.846332
Show Author Affiliations
Ken Maruyama, JSR Corp. (Japan)
Makoto Shimizu, JSR Corp. (Japan)
Yuuki Hirai, JSR Corp. (Japan)
Kouta Nishino, JSR Corp. (Japan)
Tooru Kimura, JSR Corp. (Japan)
Toshiyuki Kai, JSR Corp. (Japan)
Kentaro Goto, JSR Micro, Inc. (United States)
Shalini Sharma, JSR Micro, Inc. (United States)

Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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