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Proceedings Paper

New exposure tool management technology with quick focus measurement in half pitch 22nm generation
Author(s): Kazuhiko Fukazawa; Toshiaki Kitamura; Shinsuke Takeda; Yoshihiko Fujimori; Yuji Kudo; Shigeru Hirukawa; Kengo Takemasa; Noriaki Kasai; Yuuichiro Yamazaki; Kiminori Yoshino
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Paper Abstract

We have developed the new technology to measure focus variations in a field or over the wafer quickly for exposure tool management. With the new technology, 2-dimensional image(s) of the whole wafer are captured with diffraction optics, and by analyzing the image signal(s), we are able to get a focus map in an exposure field or over the entire wafer. Diffraction-focus curve is used instead of a CD-focus curve to get the focus value from the image signal(s). The measurements on the production patterns with the production illumination conditions are available. We can measure the field inclination and curvature from the focus map. The performance of the new method was confirmed with a test pattern and production patterns.

Paper Details

Date Published: 1 April 2010
PDF: 9 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763806 (1 April 2010); doi: 10.1117/12.846329
Show Author Affiliations
Kazuhiko Fukazawa, Nikon Corp. (Japan)
Toshiaki Kitamura, Nikon Corp. (Japan)
Shinsuke Takeda, Nikon Corp. (Japan)
Yoshihiko Fujimori, Nikon Corp. (Japan)
Yuji Kudo, Nikon Corp. (Japan)
Shigeru Hirukawa, Nikon Corp. (Japan)
Kengo Takemasa, Nikon Corp. (Japan)
Noriaki Kasai, Nikon Corp. (Japan)
Yuuichiro Yamazaki, Toshiba Corp. (Japan)
Kiminori Yoshino, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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