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Proceedings Paper

LWR reduction by novel lithographic and etch techniques
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Paper Abstract

The reduction of line width roughness (LWR) is a critical issue in developing resist materials for EUV lithography and LWR represents a trade-off between sensitivity and resolution. Additional post pattern processing is expected as an LWR reduction technique without impact to resolution or sensitivity. This paper reports the LWR reducing effect of a post-development resist-smoothing process. Approximately 20% improvement in LWR for ArF immersion exposed resist patterns was achieved for two types of resist and two illumination conditions. The LWR after BARC etching in which resist-smoothing was applied was decreased relative to the case in which smoothing was not applied. Resist-smoothing process also reduced LWR of an EUV exposure resist pattern by approximately 10%. These results confirm that resistsmoothing process is robust for different resists and illumination conditions.

Paper Details

Date Published: 29 March 2010
PDF: 7 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763914 (29 March 2010); doi: 10.1117/12.846318
Show Author Affiliations
Shinji Kobayashi, Tokyo Electron Kyushu Ltd. (Japan)
Satoru Shimura, Tokyo Electron Kyushu Ltd. (Japan)
Tetsu Kawasaki, Tokyo Electron Kyushu Ltd. (Japan)
Kathleen Nafus, Tokyo Electron Kyushu Ltd. (Japan)
Shinichi Hatakeyama, Tokyo Electron Kyushu Ltd. (Japan)
Hideo Shite, Tokyo Electron Kyushu Ltd. (Japan)
Eiichi Nishimura, Tokyo Electron AT Ltd. (Japan)
Masato Kushibiki, Tokyo Electron AT Ltd. (Japan)
Arisa Hara, Tokyo Electron AT Ltd. (Japan)
Roel Gronheid, IMEC (Belgium)
Alessandro Vaglio-Pret, IMEC (Belgium)
Junichi Kitano, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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