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Proceedings Paper

Evaluation results of a new EUV reticle pod based on SEMI E152
Author(s): Kazuya Ota; Masami Yonekawa; Takao Taguchi; Osamu Suga
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Paper Abstract

To protect the reticle during shipping, storage and tool handling, various reticle pod concepts have been proposed and evaluated in the last 10 years. MIRAI-Selete has been developing EUV reticle handling technology and evaluating EUV reticle pods designed using "Dual Pod Concept" for four years. The concept was jointly proposed by Canon and Nikon at the EUV mask technology and standards workshop at Miyazaki in November 2004; a mask is doubly protected by an inner pod and an outer pod and the mask is carried into an exposure tool with the inner pod. Canon, Nikon and Entegris have started collaboration in 2005 and developed three types of EUV pod prototypes, alpha, beta and gamma. The gamma pods were evaluated by MIRAI-Selete and the superiority of the dual pod concept has been verified with many experimental data on shipping, storage and tool handling. The dual pod concept was standardized as SEMI E152-0709 "Mechanical Specification of EUV Pods for 150mm EUVL Reticles" in 2009. Canon, Nikon and Entegris have developed a new pod design compatible with SEMI E152; it has a Type A inner baseplate for uses with EUV exposure tools. The baseplate has two alignment windows, a window for a data matrix symbol and five pockets as the front edge grip exclusion volumes. In addition to the new features, there are some differences between the new SEMI compliant pod design and the former design "CNE-gamma", e.g. the material of the inner cover was changed to metal to reduce outgassing rate and the gap between the reticle and the side supports were widened to satisfy a requirement of the standard. MIRAI-Selete has evaluated the particle protective capability of the new SEMI compliant pods "cnPod" during shipping, storage and tool handling in vacuum and found the "cnPod" has the excellent particle protective capability and the dual pod concept can be used not only for EUVL pilot line but also for EUVL high volume manufacturing.

Paper Details

Date Published: 20 March 2010
PDF: 11 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361F (20 March 2010); doi: 10.1117/12.846316
Show Author Affiliations
Kazuya Ota, Semiconductor Leading Edge Technologies, Inc. (Japan)
Masami Yonekawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takao Taguchi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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