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Proceedings Paper

A silicon-containing resist for immersion lithography
Author(s): Ratnam Sooriyakumaran; Wu-Song Huang; Sally Swanson; Hoa Truong; Phillip Brock; Alexander Friz; Kuang-Jung Chen; Robert Allen
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Paper Abstract

We have developed a new silicon-containing resist for 193-nm immersion lithography. This resist is compatible with topcoats used in the industry today for immersion lithography. Most of the current topcoats contain 4-methyl-2- pentanol as a solvent. Our evaluations indicated that the previously developed silicon-containing resists are not compatible with the current topcoats because of their solubility in 4-methyl-2-pentanol. In the new resist polymers, we have incorporated high percentage (> 60 mol%) of lactone monomers to prevent them from dissolving in this solvent. In order to increase the lactone content in a silicon polymer, we have incorporated lactone containing acidlabile functionalities in addition to widely used acid-inert lactone monomers. Utilizing these polymers, we have demonstrated a functional silicon-containing photoresist for immersion lithography.

Paper Details

Date Published: 25 March 2010
PDF: 8 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390F (25 March 2010); doi: 10.1117/12.846280
Show Author Affiliations
Ratnam Sooriyakumaran, IBM Almaden Research Ctr. (United States)
Wu-Song Huang, IBM Systems and Technology Group (United States)
Sally Swanson, IBM Almaden Research Ctr. (United States)
Hoa Truong, IBM Almaden Research Ctr. (United States)
Phillip Brock, IBM Almaden Research Ctr. (United States)
Alexander Friz, IBM Almaden Research Ctr. (United States)
Kuang-Jung Chen, IBM Systems and Technology Group (United States)
Robert Allen, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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