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Proceedings Paper

High-speed charge transfer pinned-photodiode for a CMOS time-of-flight range image sensor
Author(s): Hiroaki Takeshita; Tomonari Sawada; Tetsuya Iida; Keita Yasutomi; Shoji Kawahito
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Paper Abstract

This paper presents a structure and method of range calculation for CMOS time-of-flight(TOF) range image sensors using pinned photodiodes. In the proposed method, a LED light with short pulse width and small duty ratio irradiates the objects and a back-reflected light is received by the CMOS TOF range imager.Each pixel has a pinned photodiode optimized for high speed charge transfer and unwanted charge draining. In TOF range image sensors, high speed charge transfer from the light receiving part to a charge accumulator is essential.It was found that the fastest charge transfer can be realized when the lateral electric field along the axis of charge transfer is constant and this conditon is met when the shape of the diode exactly follows the relationship between the fully-depleted potential and width. A TOF range imager prototype is designed and implemented with 0.18um CMOS image sensor technology with pinned photodiode 4transistor(T) pixels. The measurement results show that the charge transfer time is a few ns from the pinned photodiode to a charge accumulator.

Paper Details

Date Published: 25 January 2010
PDF: 9 pages
Proc. SPIE 7536, Sensors, Cameras, and Systems for Industrial/Scientific Applications XI, 75360R (25 January 2010); doi: 10.1117/12.846277
Show Author Affiliations
Hiroaki Takeshita, Shizuoka Univ. (Japan)
Tomonari Sawada, Shizuoka Univ. (Japan)
Tetsuya Iida, Shizuoka Univ. (Japan)
Keita Yasutomi, Shizuoka Univ. (Japan)
Shoji Kawahito, Shizuoka Univ. (Japan)


Published in SPIE Proceedings Vol. 7536:
Sensors, Cameras, and Systems for Industrial/Scientific Applications XI
Erik Bodegom; Valérie Nguyen, Editor(s)

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