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Proceedings Paper

Challenges of EUVL resist process toward practical application
Author(s): Shinichi Ito; Yukiko Kikuchi; Daisuke Kawamura; Eishi Shiobara; Keiichi Tanaka; Hitoshi Kosugi; Junichi Kitano; Takayuki Toshima
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Paper Abstract

This paper reports the extracted risk issues on practical EUV resist processes and discusses verifications of them. The risk issues were extracted with emphasis on critical dimension, defectivity and productivity for mass production EUV resist processes. The authors verified these risk factors by utilizing available empirical knowledge. The authors found that the micro loading effect of by-product in the resist development process was a key factor for CD uniformity. Also discovered, was that high surface energy differences on the patterned wafers were a key factor for defectivity. As a result, application of scan-dynamic development and dynamic scan rinse to EUV processes on a mass production level will contribute greatly to CD and defect control as well as productivity.

Paper Details

Date Published: 23 March 2010
PDF: 9 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76362V (23 March 2010); doi: 10.1117/12.846260
Show Author Affiliations
Shinichi Ito, Toshiba Corp. (Japan)
Yukiko Kikuchi, Toshiba Corp. (Japan)
Daisuke Kawamura, Toshiba Corp. (Japan)
Eishi Shiobara, Toshiba Corp. (Japan)
Keiichi Tanaka, Tokyo Electron Kyushu Ltd. (Japan)
Hitoshi Kosugi, Tokyo Electron Kyushu Ltd. (Japan)
Junichi Kitano, Tokyo Electron Kyushu Ltd. (Japan)
Takayuki Toshima, Tokyo Electron Kyushu Ltd. (Japan)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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