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Proceedings Paper

High operating temperature MWIR detectors
Author(s): H. F. Schaake; M. A. Kinch; D. Chandra; P. K. Liao; D. F. Weirauch; C.-F. Wan; H. D. Shih
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Paper Abstract

The High Operating Temperature Auger suppressed infrared detector concept is being pursued using the high density vertically integrated photodiode (HDVIP®) architecture and an n+-p device structure. Dark current densities as low as 2.5 mA/cm2 normalized to a 5 μm cutoff at 250K have been demonstrated on these diodes. These dark currents imply minority carrier lifetimes in excess of 300μsec. 1/f noise in these devices arises from the tunneling of charge into the passivation interface, giving rise to a modulation in the surface positive charge and hence to the width of the depletion region in the p-side of the device and a modulation in the total dark current. The measured 1/f noise is in agreement with the predictions of this model, with very low noise being observed when the lifetimes are high.

Paper Details

Date Published: 22 January 2010
PDF: 13 pages
Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081O (22 January 2010); doi: 10.1117/12.846254
Show Author Affiliations
H. F. Schaake, DRS Technologies, Inc. (United States)
M. A. Kinch, DRS Technologies, Inc. (United States)
D. Chandra, DRS Technologies, Inc. (United States)
P. K. Liao, DRS Technologies, Inc. (United States)
D. F. Weirauch, DRS Technologies, Inc. (United States)
C.-F. Wan, DRS Technologies, Inc. (United States)
H. D. Shih, DRS Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 7608:
Quantum Sensing and Nanophotonic Devices VII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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